Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
出版年份 2014 全文链接
标题
Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 8, Pages 083519
出版商
AIP Publishing
发表日期
2014-03-02
DOI
10.1063/1.4867202
参考文献
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