期刊
APPLIED PHYSICS LETTERS
卷 104, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4864404
关键词
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资金
- ONR [N00014-11-1-0665]
- National Science Foundation through the MRSEC program (Cornell Center for Materials Research) [DMR-1120296]
- National Science Foundation Materials Research Science and Engineering Centers (MRSEC) program [DMR 1120296]
- NSF [IMR-0417392]
- Army Research Office
- National Science Foundation [ECCS-0335765]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1063059] Funding Source: National Science Foundation
We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change Delta R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm. (C) 2014 AIP Publishing LLC.
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