期刊
APPLIED PHYSICS LETTERS
卷 102, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4809828
关键词
-
资金
- National Basic Research Program of China [2010CB934104]
- National High Technology Research and Development Program of China [2007AA03Z303]
The electron mobility in a heavily n-doped junctionless nanowire transistor is demonstrated by the experimental investigation of the transfer characteristics at low temperatures. It is found that the minimum electron mobility at a critical low temperature results from the interplay of the thermal activation and impurity scattering. The temperature-dependence tendency of the normalized electron mobility by theoretical calculation and experimental extraction reveals that the thermal activation is responsible for the impact of the donor ionization and thermal energy on the electron mobility. (C) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据