标题
Strong exciton confinement in site-controlled GaN quantum dots embedded in nanowires
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 103, Issue 17, Pages 171907
出版商
AIP Publishing
发表日期
2013-10-24
DOI
10.1063/1.4826931
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires
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- Measurement of an Exciton Rabi Rotation in a SingleGaN/AlxGa1−xNNanowire-Quantum Dot Using Photoluminescence Spectroscopy: Evidence for Coherent Control
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- Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters
- (2012) J. Tatebayashi et al. APPLIED PHYSICS LETTERS
- Selective-area growth of thin GaN nanowires by MOCVD
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- Site-controlled growth of single GaN quantum dots in nanowires by MOCVD
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- Ultrafast Room Temperature Single-Photon Source from Nanowire-Quantum Dots
- (2012) S. Bounouar et al. NANO LETTERS
- Stress-driven island growth on top of nanowires
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- Size dependent biexciton binding energies in GaN quantum dots
- (2011) S. Amloy et al. APPLIED PHYSICS LETTERS
- Threading defect elimination in GaN nanowires
- (2011) Stephen D. Hersee et al. JOURNAL OF MATERIALS RESEARCH
- Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface states
- (2010) D. Camacho Mojica et al. PHYSICAL REVIEW B
- Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-bandk⋅ptheory and configuration-interaction method
- (2009) Stanko Tomić et al. PHYSICAL REVIEW B
- Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires
- (2009) J. Renard et al. PHYSICAL REVIEW B
- Exciton and Biexciton Luminescence from Single GaN/AlN Quantum Dots in Nanowires
- (2008) Julien Renard et al. NANO LETTERS
- Controlling the emission profile of a nanowire with a conical taper
- (2008) Niels Gregersen et al. OPTICS LETTERS
- Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
- (2008) D. Simeonov et al. PHYSICAL REVIEW B
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