Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal
出版年份 2013 全文链接
标题
Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 103, Issue 11, Pages 112107
出版商
AIP Publishing
发表日期
2013-09-14
DOI
10.1063/1.4821279
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Temperature dependent conductivity of polycrystalline Cu2ZnSnS4 thin films
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- Free-to-bound recombination in near stoichiometric Cu2ZnSnS4single crystals
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- Studies on Cu2ZnSnS4 (CZTS) absorber layer using different stacking orders in precursor thin films
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- Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights
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- Electronic structure and stability of quaternary chalcogenide semiconductors derived from cation cross-substitution of II-VI andI-III-VI2compounds
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