4.6 Article

Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure

期刊

APPLIED PHYSICS LETTERS
卷 102, 期 10, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4795145

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  1. National Natural Science Foundation of China [11074193, 51132001]
  2. Australian Research Council (ARC)

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We report a continuously tunable resistive switching behavior in Pt/BiFeO3/Nb-doped SrTiO3 heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 x 10(5)% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO3/Nb-doped SrTiO3 interface. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795145]

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