Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique
出版年份 2013 全文链接
标题
Oligothiophene-based monolayer field-effect transistors prepared by Langmuir-Blodgett technique
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 103, Issue 4, Pages 043310
出版商
AIP Publishing
发表日期
2013-07-26
DOI
10.1063/1.4816839
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters
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