4.6 Article

Effect of composition and strain on the electrical properties of LaNiO3 thin films

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APPLIED PHYSICS LETTERS
卷 103, 期 14, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4823697

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资金

  1. National Natural Science of Foundation of China [51202256, 51172238]
  2. National Basic Research Program [2010CB934603]
  3. Ministry of Science and Technology of China
  4. Deutsche Forschungsgemeinshaft [KO 4093/1-1]
  5. China Scholarship Council (CSC)

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The Ni content of LaNi1-xO3 epitaxial thin films grown by pulsed laser deposition has been varied by ablation from targets with different composition. While tensile strain and Ni substoichiometry reduce the conductivity, nearly stoichiometric and unstrained films show reproducibly resistivities below 100 mu Omega X cm. Since the thermodynamic instability of the Ni3+ state drives defect formation, Ni defect engineering is the key to obtain highly conducting LaNiO3 thin films. (C) 2013 AIP Publishing LLC.

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