Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

标题
Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 5, Pages 053114
出版商
AIP Publishing
发表日期
2013-02-07
DOI
10.1063/1.4788708

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