The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

(2013) Steven P. DenBaars et al.   ACTA MATERIALIA

Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study

(2013) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes

(2013) R. Vaxenburg et al.   APPLIED PHYSICS LETTERS

Correlation between carrier localization and efficiency droop in AlGaN epilayers

(2013) J. Mickevičius et al.   APPLIED PHYSICS LETTERS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells

(2012) Faisal F. Sudradjat et al.   APPLIED PHYSICS LETTERS

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

(2012) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Photoluminescence efficiency droop and stimulated recombination in GaN epilayers

(2012) Jáūras Mickevičius et al.   OPTICS EXPRESS

Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

(2011) T. Detchprohm et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting

(2011) K. P. O'Donnell et al.   Physica Status Solidi-Rapid Research Letters

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

(2010) Theeradetch Detchprohm et al.   APPLIED PHYSICS LETTERS

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

(2010) W. Sun et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Deep-Ultraviolet Light-Emitting Diodes

(2009) Michael S. Shur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

(2009) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

Suppression of Auger Processes in Confined Structures

(2009) George E. Cragg et al.   NANO LETTERS

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Performance of high-power III-nitride light emitting diodes

(2008) G. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Theory of intrinsic electric polarization and spin Hall current in spin-orbit-coupled semiconductor heterostructures

(2008) A. V. Rodina et al.   PHYSICAL REVIEW B