期刊
APPLIED PHYSICS LETTERS
卷 103, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4813538
关键词
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资金
- National Basic Research Program of China [2011CB302005]
- National Natural Science Foundation of China [61006006, 61076045, 61106003, 61223005]
- science and technology development project in Jilin Province [20080124]
Vertically aligned ZnO nanowall networks were grown on p-GaN/sapphire substrates by metal-organic chemical vapor deposition, and further heterojunction light-emitting diodes based on n-ZnO/p-GaN were fabricated. Highly efficient ultraviolet-blue emission was observed from the diode under forward bias, and it operated continuously for 8.5 h with decay of only 8.08% under a continuous current of 12 mA. The diode exhibited low emission onset and good stability. In addition, temperature-dependent electroluminescence and current-voltage behaviors of the diode were investigated to examine the thermal effects on light output power, spectral line shift, and temperature sensitivity of the resulting voltage. (C) 2013 AIP Publishing LLC.
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