期刊
APPLIED PHYSICS LETTERS
卷 102, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4802841
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资金
- National Science Foundation [0549399]
- Veeco Corporation
- Division Of Graduate Education
- Direct For Education and Human Resources [0549399] Funding Source: National Science Foundation
Time-resolved photoluminescence is an established technique for characterizing carrier lifetimes in semiconductors, but the dependence of lifetime on excitation fluence has been only qualitatively investigated. We develop a quantitative approach for fitting fluence-dependent PL decay data to a Shockely-Read-Hall model of carrier recombination in order to extract the trap state density. We demonstrate this approach by investigating growth rate-dependent trap densities in gallium arsenide-indium gallium phosphide double heterostructures. The techniques developed here can be applied for rapid, non-destructive quantification of trap state densities in a variety of materials. (C) 2013 AIP Publishing LLC
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