4.6 Article

Improved photovoltaic effects in InGaN-based multiple quantum well solar cell with graphene on indium tin oxide nanodot nodes for transparent and current spreading electrode

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APPLIED PHYSICS LETTERS
卷 102, 期 3, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4789502

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  1. National Research Foundation of Korea (NRF)
  2. Ministry of Education, Science and Technology [2010-0019694, 2012R1A1A3011103]
  3. National Research Foundation of Korea [2012R1A1A3011103] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We implemented graphene network on indium tin oxide (ITO) nanodots to a transparent and current-spreading electrode in InGaN-based solar cell to improve power conversion efficiency. The external quantum efficiency and short circuit current density (Jsc) of solar cells with graphene network on ITO nanodots were enhanced compared to those of solar cells with ITO and bare graphene film. The increase of the power conversion efficiency is attributed to the high transmittance, internal light-scattering effect, and effective carrier absorption of ITO nanodots. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789502]

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