期刊
APPLIED PHYSICS LETTERS
卷 102, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4789775
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资金
- EU ERCAG Program [3-TOP]
- Bavarian Ministry of Sciences, Research and the Arts
- Alexander von Humboldt Foundation
Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Delta omega = 13 arc sec, and the (omega - 2 theta) scans exhibit clear layer thickness fringes. Atomic force microscope images show triangular twin domains with sizes increasing with layer thickness. The structural quality of the domains is confirmed on the microscopic level by transmission electron microscopy. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789775]
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