Direct patterning of solution-processed organic thin-film transistor by selective control of solution wettability of polymer gate dielectric

A simple direct patterning method for solution-processable organic semiconductors (OSCs) is demonstrated. The solution-wettable and nonwettable regions of a polymer gate dielectric layer were selectively controlled by a short tetrafluoromethane gas plasma treatment, and we precisely patterned the OSC film in the desired channel region by lamination coating. The patterned OSC films represent polycrystalline structures consisting of crystalline domains varying from 30 to 60 mu m, and the resulting short-channel thin-film transistor (TFT) showed a high mobility of up to 1.3 cm(2)/Vs, a large on/off ratio over 10(8), and a negligible hysteresis curve. The proposed method is scalable for patterning TFT arrays with large-area dimensions. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802499]