4.6 Article

Electronic transport and Schottky barrier heights of p-type CuAlO2 Schottky diodes

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APPLIED PHYSICS LETTERS
卷 102, 期 19, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4806970

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  1. National Science Council of Taiwan [100-2112-M-018-003-MY3]

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A CuAlO2 Schottky diode was fabricated and investigated using current density-voltage (J-V) and capacitance-voltage (C-V) methods. It is shown that the barrier height (q phi(B)) determined from J-V measurements is lower than that determined from C-V measurements and q phi(B) determined from C-V measurements is close to the Schottky limit. This is due to a combined effect of the image-force lowering and tunneling. Time domain measurements provide evidence of the domination of electron trapping with long-second lifetime in CuAlO2. Carrier capture and emission from charge traps may lead to the increased probability of tunneling, increasing the ideality factor. (C) 2013 AIP Publishing LLC.

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