期刊
APPLIED PHYSICS LETTERS
卷 102, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4801636
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资金
- CSIR, India
- DST, Government of India
Energetic position and distribution of defect states due to structural disorder in pentacene and copper phthalocyanine have been obtained by capacitance based spectroscopic techniques. It has been shown that capacitance-frequency and capacitance-voltage characteristics exhibit Gaussian distribution of traps with an energetic position at around 0.5 eV above the highest occupied molecular orbital level of the pentacene and CuPc. These traps have been created by varying growth conditions and almost identical trap parameters in pentacene and copper phthalocyanine indicate that similar structural disorder is responsible for these traps. (C) 2013 AIP Publishing LLC.
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