4.6 Article

Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

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APPLIED PHYSICS LETTERS
卷 102, 期 14, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4801521

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  1. Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA), through the Army Research Office

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We present low-temperature measurements of the low-frequency 1/f noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlOx/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance has similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlOx barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments. (C) 2013 AIP Publishing LLC.

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