4.6 Article

Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 epitaxial heterostructures

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APPLIED PHYSICS LETTERS
卷 102, 期 3, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4788723

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资金

  1. National Basic Research Program of China (973 Program) [2012CB922004/3, 2010CB934501, 2009CB929502]
  2. Natural Science Foundation of China [11179008, 50832005, 51021091]
  3. Chinese Universities Scientific Fund
  4. US National Science Foundation (NSF) [DMR-0907353]
  5. Direct For Mathematical & Physical Scien
  6. Division Of Materials Research [0907353] Funding Source: National Science Foundation

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The non-volatile resistance states induced by converse piezoelectric effect are observed in ferromagnetic/ferroelectric epitaxial heterostructures of (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O-3-0.3PbTiO(3) (LSMO/PMN0.7PT0.3). Three stable remnant strain states and the corresponding resistance states are achieved by properly reversing the electric field from the depolarized direction in ferroelectric PMN0.7PT0.3 substrate. The non-volatile resistance states of the LSMO film can be manipulated by applied electric-field pulse sequence as a result of the large coupling between the electronic states of LSMO film and the strain transferred from the ferroelectric substrate. The electrically tunable, non-volatile resistance states observed exhibit potential for applications in low-power-consumption electronic devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788723]

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