Article
Chemistry, Multidisciplinary
Junyi Liao, Wen Wen, Juanxia Wu, Yaming Zhou, Sabir Hussain, Haowen Hu, Jiawei Li, Adeel Liaqat, Hongwei Zhu, Liying Jiao, Qiang Zheng, Liming Xie
Summary: We have designed an in-memory computing device, MOfeS-FET, based on van der Waals ferroelectric semiconductor (InSe), which integrates memory and logic functions in the same material. It shows long retention time, high on/off ratios, stable cyclic endurance, and is capable of performing inverter, programmable NAND, and NOR Boolean logic operations with nonvolatile storage of the results.
Article
Chemistry, Analytical
Yangyang Zhu, Yiqun Zhang, Jiajia Yu, Chengren Zhou, Chaojie Yang, Lu Wang, Li Wang, Libo Ma, Li Juan Wang
Summary: A facile strategy was proposed to optimize the growth of organic field effect transistors by regulating the thickness of vanadyl-phthalocyanine films and carrying out thermal annealing. The resulting sensors exhibit multi-parameter response to humidity and nitrogen dioxide gas, with high sensitivity and repeatability.
SENSORS AND ACTUATORS B-CHEMICAL
(2023)
Review
Materials Science, Multidisciplinary
Ankit Kumar, Gaurav Gupta, Komal Bapna, D. D. Shivagan
Summary: This review presents humidity sensors based on semiconductor metal oxide (SMO) nanostructures and their composites, discussing their sensing characteristics, humidity generation methods, sensing mechanism, and the influence of material engineering. The review also explores the challenges and future developments of these sensors.
MATERIALS RESEARCH BULLETIN
(2023)
Article
Physics, Applied
I. U. Jayawardhena, R. P. Ramamurthy, D. Morisette, A. C. Ahyi, R. Thorpe, M. A. Kuroda, L. C. Feldman, S. Dhar
Summary: Silicon carbide (4H) based metal-oxide-semiconductor field-effect transistors offer capabilities in high power and high temperature that silicon cannot achieve. This research investigates the use of deposited Al2O3 dielectrics instead of thermal oxidation, resulting in improved electronic properties. The optimal structure involves preparation of a nitrided surface through NO annealing, hydrogen exposure, and Al2O3 deposition, leading to high inversion layer field-effect mobilities. Leakage currents and interface breakdown are also observed in various Al2O3/4H-SiC MOS structures.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Crystallography
Maolin Zhang, Lei Wang, Kemeng Yang, Jiafei Yao, Weihua Tang, Yufeng Guo
Summary: The on-state properties and breakdown characteristics of the gallium oxide-on-silicon carbide metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated using the technology computer-aided design (TCAD) approach. Compared to a full gallium oxide MOSFET, the lattice temperature of the gallium oxide-on-silicon carbide MOSFET was reduced by almost 100°C due to the high thermal conductivity of silicon carbide. However, an unoptimized gallium oxide-on-silicon carbide MOSFET showed a breakdown voltage degradation of over 40%. By optimizing the device structure, the breakdown voltage degradation of the gallium oxide-on-silicon carbide MOSFET was significantly reduced.
Article
Chemistry, Physical
I-Kai Cheng, Chun-Yu Lin, Fu-Ming Pan
Summary: The sensing reaction mechanism of ZnO towards H-2 was investigated, showing distinct response features at temperatures above 150 degrees C. Humidity affects sensor performance, while Pt decoration greatly improves sensor performance in both dry and humid environments. This improvement is attributed to hydrogen spillover from Pt nanoparticles to the ZnO support.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Physical
Zhen Li, Katherine R. Jinkins, Dingzhou Cui, Mingrui Chen, Zhiyuan Zhao, Michael S. Arnold, Chongwu Zhou
Summary: Carbon nanotubes (CNTs) are ideal for nano-electronics due to their high mobility and low-cost processing, but their p-type nature in air poses challenges. This paper presents a scalable process to fabricate high-performance n-type behavior CNT FETs using atomic layer deposition and metal contact engineering. The successful demonstration of complementary metal-oxide-semiconductor inverters paves the way for promising carbon nanotube nano-electronics.
Article
Chemistry, Analytical
Tung Pham, Ying Chen, Jhoann Lopez, Mei Yang, Thien-Toan Tran, Ashok Mulchandani
Summary: This study reveals the degradation of MoS2 FET-based sensors grown using chemical vapor deposition in the presence of phosphate buffer and water, which was resolved by coating with Al2O3 and successfully applied for detection in complex matrices.
Review
Biochemistry & Molecular Biology
Mohamed Taha Amen, Thuy Thi Thanh Pham, Edward Cheah, Duy Phu Tran, Benjamin Thierry
Summary: Metal-oxide semiconductor FET-based biochemical sensors have great potential for applications, especially in the development of PoCT devices. However, this technology is currently mainly limited to academia and needs to be translated into real-life applications. Reviewing the literature and discussing critical features can accelerate the successful development of metal-oxide semiconductor FET-based PoCT devices.
Article
Nanoscience & Nanotechnology
Keigo Matsuyama, Ryuya Aoki, Kohei Miura, Akito Fukui, Yoshihiko Togawa, Takeshi Yoshimura, Norifumi Fujimura, Daisuke Kiriya
Summary: This study investigates the modulation of carrier transport behavior in monolayer and multilayer MoS2 through surface charge transfer doping with benzyl viologen molecules. The metallic behavior transitions to an insulative state under negative gate voltage, exhibiting a metal-insulator transition. These findings provide insights into device characteristics of thin-layered materials and controlling phases via carrier modulation.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide
Summary: The electrical properties and thermal stabilities of boron-doped diamond (B-diamond) MOS capacitor and MOS field-effect transistor (MOSFET) on a flat diamond epitaxial layer were investigated after annealing at 500 degrees C. The annealing process slightly increased the leakage current density of the B-diamond MOS capacitor. The drain-current and extrinsic transconductance maxima of the MOSFETs also showed improvements after annealing compared to the as-fabricated state. These results are significantly better than previously reported B-diamond MOSFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Nanoscience & Nanotechnology
Zichen Zhang, Matthias Passlack, Gregory Pitner, Cheng-Hsuan Kuo, Scott T. Ueda, James Huang, Harshil Kashyap, Victor Wang, Jacob Spiegelman, Kai-Tak Lam, Yu-Chia Liang, San Lin Liew, Chen-Feng Hsu, Andrew C. Kummel, Prabhakar Bandaru
Summary: A low-temperature AlOx process was used to deposit high nucleation density oxide layers on carbon materials, enabling the growth of sub-nanometer gate oxides. Electrical measurements and simulations demonstrated the feasibility of using this low-temperature AlOx process for gate oxides on carbon nanotubes, showing potential for carbon-based electronic device applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Computer Science, Information Systems
Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang
Summary: In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a polycrystalline silicon (Poly-Si) metal-oxide-semiconductor field-effect transistor (MOSFET) with a storage layer separated using a separation oxide was designed and analyzed. The proposed 1T-DRAM achieved good performance, even in the presence of a grain boundary.
Article
Engineering, Electrical & Electronic
Cheng Qian, Zhiqiang Wang, Guoqing Xin, Xiaojie Shi
Summary: This article presents quick analytical prediction methods for switching loss, turn-on/off overvoltage, di/dt, and dv/dt based on SiC metal-oxide-semiconductor field-effect transistor datasheet. The proposed methods are validated through experimental results, and the relationships between switching performance and different parameters are analyzed and summarized.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Yu Fu, Yuhao Chang, Shozo Kono, Atsushi Hiraiwa, Kyotaro Kanehisa, Xiaohua Zhu, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada
Summary: This article presents a novel approach to integrate the advanced silicon manufacturing process with wide bandgap diamond material for power applications. By utilizing a metal mask and molecular beam deposition method, the researchers successfully achieved oxidized Si-terminated (C-Si) diamond MOSFETs with a subsurface p-channel. The fabricated devices demonstrated high performance with a remarkably high threshold voltage and maximum drain current density.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Jae-Shin Lee, Kwang-Wook Choi, Jae-Young Yoo, Min-Seung Jo, Jun-Bo Yoon
Article
Chemistry, Multidisciplinary
Min-Ho Seo, Jae-Young Yoo, Min-Seung Jo, Jun-Bo Yoon
ADVANCED MATERIALS
(2020)
Article
Chemistry, Multidisciplinary
Kwang-Wook Choi, Min-Seung Jo, Jae-Shin Lee, Jae-Young Yoo, Jun-Bo Yoon
ADVANCED FUNCTIONAL MATERIALS
(2020)
Article
Engineering, Electrical & Electronic
Su-Bon Kim, Yong-Hoon Yoon, Yong-Bok Lee, Kwang-Wook Choi, Min-Seung Jo, Hyun-Woo Min, Jun-Bo Yoon
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
(2020)
Article
Chemistry, Multidisciplinary
Min-Ho Seo, Kyungnam Kang, Jae-Young Yoo, Jaeho Park, Jae-Shin Lee, Incheol Cho, Beom-Jun Kim, Yongrok Jeong, Jung-Yong Lee, Byeongsu Kim, Junsuk Rho, Jun-Bo Yoon, Inkyu Park
Article
Nanoscience & Nanotechnology
Eunhwan Jo, Yong-Bok Lee, Yohan Jung, Su-Bon Kim, Yunsung Kang, Min-Ho Seo, Jun-Bo Yoon, Jongbaeg Kim
Summary: The study introduces highly reliable microelectromechanical switches using nanocomposites, with a combination of gold nanoparticles and carbon nanotubes to increase the effective contact area and provide low contact resistance current paths, allowing for robust switching operations under hot-switching conditions.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Review
Engineering, Electrical & Electronic
Jae-Young Yoo, Jae-Soon Yang, Myung-Kun Chung, Sung-Ho Kim, Jun-Bo Yoon
Summary: Flexible electronics have gained attention for their ability to be integrated on various platforms, with research focus shifting towards maintaining stable performance in diverse environmental stimuli. Efforts in structural designs for improving and preserving the performance of flexible electronics in different environmental conditions are highlighted in this paper.
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
(2021)
Article
Engineering, Electrical & Electronic
Pan Kyu Choi, Yong-Bok Lee, Suhyun Kim, Tae-Soo Kim, Jun-Bo Yoon
Summary: A non-volatile mechanical memory device with CMOS-level operation voltage and low contact resistance is proposed utilizing electro-thermal actuation and exploiting stiction. The device successfully performed 200 repeated cycles of write and erase operations, achieved a contact resistance of 17 omega, and retained both ON and OFF states for over 10^6 seconds without power.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
(2022)
Article
Engineering, Electrical & Electronic
Su-Bon Kim, Hyun-Woo Min, Yong-Bok Lee, Su-Hyun Kim, Pan-Kyu Choi, Jun-Bo Yoon
Summary: This paper demonstrates the successful utilization of mechanical adhesion force to achieve extremely low contact resistance in a MEMS relay. By designing a suitable contact area and detachment spring structure, the relay can perform multiple switching operations while maintaining stable mechanical contact. The proposed MEMS relay exhibited a low contact resistance of 4.9 mΩ with only mechanical adhesion force at a low actuation voltage of 3.8 V.
SENSORS AND ACTUATORS A-PHYSICAL
(2021)
Article
Chemistry, Multidisciplinary
Min-Seung Jo, Ki-Hoon Kim, Kwang-Wook Choi, Jae-Shin Lee, Jae-Young Yoo, Sung-Ho Kim, Heejeong Jin, Min-Ho Seo, Jun-Bo Yoon
Summary: A phase-transition-inhibited Pd nanowire H-2 sensor is proposed, which can detect high concentrations of H-2 with high linearity and sensitivity. By optimizing the nanowire dimensions and using a special fabrication method, the sensor achieves high stability and accuracy, enabling real-time detection of H-2 leakage.
Article
Multidisciplinary Sciences
Yong-Bok Lee, Min-Ho Kang, Pan-Kyu Choi, Su-Hyun Kim, Tae-Soo Kim, So-Young Lee, Jun-Bo Yoon
Summary: With the rapid growth of the semiconductor industry, radiation hardness has become essential for memory devices. However, implementing radiation-hardened semiconductor memory devices requires various technologies and incurs significant energy overhead. Therefore, there is a growing demand for energy-efficient and intrinsically radiation-hard memory devices. Here, we present a nanoelectromechanical non-volatile memory (NEM-NVM) with ultra-low energy consumption and radiation hardness. The NEM-NVM can be programmed with an ultra-low energy of 2.83 fJ bit(-1) and retains its superb characteristics even after 1 Mrad irradiation.
NATURE COMMUNICATIONS
(2023)
Article
Engineering, Electrical & Electronic
Hyogeun Shin, Gun-Wook Yoon, Woongsun Choi, Donghwan Lee, Hoyun Choi, Deok Su Jo, Nakwon Choi, Jun-Bo Yoon, Il-Joo Cho
Summary: Miniaturized fluorescence imaging systems have great potential in the biomedical field, overcoming limitations of conventional microscopes. However, existing miniaturized systems face physical limitations for multicolor fluorescence imaging due to the need for multiple filters in a small structure. This study presents a miniaturized multicolor fluorescence imaging system integrated with a single polydimethylsiloxane (PDMS) light-guide plate (LGP) that allows for multicolor imaging without multiple filters. The system was demonstrated to successfully observe green- and red-labeled cells in an incubator, showing its usability in the biomedical field for various applications requiring multicolor fluorescence imaging.
NPJ FLEXIBLE ELECTRONICS
(2023)
Article
Chemistry, Multidisciplinary
Sung-Ho Kim, Min-Seung Jo, Kwang-Wook Choi, Jae-Young Yoo, Beom-Jun Kim, Jae-Soon Yang, Myung-Kun Chung, Tae-Soo Kim, Jun-Bo Yoon
Summary: A method for developing efficient gas sensors using an ultrathin insulation layer and a unique serpentine architecture is proposed, which can effectively improve the energy efficiency of the sensors while maintaining mechanical durability and long lifespan.
Proceedings Paper
Engineering, Electrical & Electronic
Jae-Young Yoo, Min-Ho Seo, Jae-Shin Lee, Kwang-Wook Choi, Min-Seung Jo, Hyeon-Joo Song, Jun-Bo Yoon
2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Eunhwan Jo, Yong-Bok Lee, Jaeyong Lee, Su-Bon Kim, Wondo Kim, Min-Ho Seo, Jun-Bo Yoon, Jongbaeg Kim
2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS)
(2019)