Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier

标题
Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 101, Issue 5, Pages 053903
出版商
AIP Publishing
发表日期
2012-08-01
DOI
10.1063/1.4740276

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