标题
Extremely high-density GaAs quantum dots grown by droplet epitaxy
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 100, Issue 21, Pages 212113
出版商
AIP Publishing
发表日期
2012-05-25
DOI
10.1063/1.4721663
参考文献
相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。- Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate
- (2011) J. G. Keizer et al. APPLIED PHYSICS LETTERS
- Two-Step Formation of Gallium Droplets with High Controllability of Size and Density
- (2011) Masafumi Jo et al. CRYSTAL GROWTH & DESIGN
- Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer
- (2011) M Jo et al. NANOTECHNOLOGY
- Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots
- (2010) Keun-Yong Ban et al. APPLIED PHYSICS LETTERS
- Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy
- (2010) D. Zhou et al. APPLIED PHYSICS LETTERS
- Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High-Temperature Droplet Epitaxy
- (2010) Jiang Wu et al. NANO LETTERS
- Self-assembled GaAs/AlGaAs coupled quantum ring-disk structures by droplet epitaxy
- (2010) C Somaschini et al. NANOTECHNOLOGY
- Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique
- (2010) Kouichi Akahane et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Design of Nanostructure Complexes by Droplet Epitaxy
- (2009) Jihoon H. Lee et al. CRYSTAL GROWTH & DESIGN
- Size and density control of In droplets at near room temperatures
- (2009) J H Lee et al. NANOTECHNOLOGY
- Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy
- (2009) T Mano et al. NANOTECHNOLOGY
- Self-assembled InGaAs tandem nanostructures consisting of a hole and pyramid on GaAs (311)A by droplet epitaxy
- (2009) J. H. Lee et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
- (2008) Ryuji Oshima et al. APPLIED PHYSICS LETTERS
- High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy
- (2008) T. Mano et al. JOURNAL OF CRYSTAL GROWTH
- Droplet epitaxy of GaAs quantum dots on (001), vicinal (001), (110), and (311)A GaAs
- (2008) Ch. Heyn et al. JOURNAL OF CRYSTAL GROWTH
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