The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 x 10(-6) Omega-cm(2) has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing accurate estimation of electron concentration, electron mobility, effective barrier height, and ideality factor. This study can be the guidance to correct measurement and understanding of the contact transport, which is useful for NWs device design and fabrication. (C) 2012 American Institute of Physics. [doi:10.1063/1.3680251]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据