Performance investigation of p-i-n ZnO-based thin film homojunction ultraviolet photodetectors

The p-i-n ZnO-based ultraviolet (UV) photodetectors was deposited using the vapor cooling condensation system. The rejection ratio between the ultraviolet and the visible was 2.82 x 10(3) measured at a reverse bias of -1V. The low-frequency noise, which was dominated by the flicker noise, exhibited the noise equivalent power of 1.70 x 10(-12) W and the high detectivity of 5.53 x 10(11) cm Hz(1/2)W(-1) with the illumination wavelength of 360 nm at the reverse bias voltage of -1V. The high performances were attributed to the low defects and interface states present in the p-i-n ZnO-based ultraviolet photodetectors prepared using the vapor cooling condensation system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768786]