期刊
APPLIED PHYSICS LETTERS
卷 100, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3685497
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资金
- Converging Research Center
- Ministry of Education, Science and Technology [2011K000694]
- National Research Foundation of Korea [2010-50228] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
High-performance dual-gate (DG) ion-sensitive field-effect transistors (ISFETs) beyond the Nernstian limit of 59 mV/pH were realized using the fully depleted (FD) silicon-on-insulator (SOI) substrate. The FD SOI-based DG ISFET exhibited a significantly enhanced pH sensitivity of 379.2 mV/pH for DG operation amplified by capacitive coupling, while it exhibited a relatively poor sensitivity of 47.9 mV/pH for single-gate (SG) operation. Meanwhile, the non-ideal effects for long-term use slightly increased by the DG operation compared to the SG operation. Therefore, the FD SOI-based DG ISFETs compatible with the complementary metal-oxide-semiconductor process are considered to be very promising bio-chemical sensors. (C) 2012 American Institute of Physics. [doi:10.1063/1.3685497]
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