标题
Anomalous transport of Sb in laser irradiated Ge
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 101, Issue 17, Pages 172110
出版商
AIP Publishing
发表日期
2012-10-25
DOI
10.1063/1.4764069
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping
- (2012) Giuliana Impellizzeri et al. Applied Physics Express
- Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon
- (2011) Szu-Lin Cheng et al. APPLIED PHYSICS LETTERS
- High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs
- (2011) C. Le Royer et al. SOLID-STATE ELECTRONICS
- Dopant-vacancy cluster formation in germanium
- (2010) A. Chroneos JOURNAL OF APPLIED PHYSICS
- Nanostructuring in Ge by self-ion implantation
- (2010) L. Romano et al. JOURNAL OF APPLIED PHYSICS
- High-level incorporation of antimony in germanium by laser annealing
- (2010) E. Bruno et al. JOURNAL OF APPLIED PHYSICS
- Ge-on-Si laser operating at room temperature
- (2010) Jifeng Liu et al. OPTICS LETTERS
- Modeling and experiments on diffusion and activation of phosphorus in germanium
- (2009) P. Tsouroutas et al. JOURNAL OF APPLIED PHYSICS
- Amorphization kinetics of germanium during ion implantation
- (2009) S. Koffel et al. JOURNAL OF APPLIED PHYSICS
- Si versus Ge for future microelectronics
- (2009) C. Claeys et al. THIN SOLID FILMS
- Vacancy-mediated dopant diffusion activation enthalpies for germanium
- (2008) A. Chroneos et al. APPLIED PHYSICS LETTERS
- Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
- (2008) Sergej Brotzmann et al. JOURNAL OF APPLIED PHYSICS
- High-resolution X-ray diffraction by end of range defects in self-amorphized Ge
- (2008) G. Bisognin et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
- Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators
- (2008) Jifeng Liu et al. Nature Photonics
- Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes
- (2008) A. Chroneos et al. PHYSICAL REVIEW B
- Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results
- (2008) S. Brotzmann et al. PHYSICAL REVIEW B
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started