Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities
出版年份 2012 全文链接
标题
Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 100, Issue 26, Pages 263502
出版商
AIP Publishing
发表日期
2012-06-28
DOI
10.1063/1.4731271
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- The structural, optical and electrical properties of Y-doped SnO thin films and their p-type TFT application
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- Improvement of Phase Stability and Accurate Determination of Optical Constants of SnO Thin Films by Using Al2O3 Capping Layer
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- Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm2 V−1 s−1
- (2010) Jeremy Smith et al. ADVANCED MATERIALS
- Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing
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- (2010) Ling Yan Liang et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors
- (2010) J.B. Kim et al. ORGANIC ELECTRONICS
- High-mobility Ambipolar Transistors and High-gain Inverters from a Donor-Acceptor Copolymer Semiconductor
- (2009) Felix Sunjoo Kim et al. ADVANCED MATERIALS
- Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application
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- Ambipolar microcrystalline silicon transistors and inverters
- (2009) Kah-Yoong Chan et al. SOLID-STATE ELECTRONICS
- Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits
- (2008) Chun-Wei Ou et al. APPLIED PHYSICS LETTERS
- p-channel thin-film transistor using p-type oxide semiconductor, SnO
- (2008) Yoichi Ogo et al. APPLIED PHYSICS LETTERS
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