期刊
APPLIED PHYSICS LETTERS
卷 100, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3684614
关键词
field effect transistors; II-VI semiconductors; nanofabrication; nanowires; semiconductor quantum wires; surface energy; wide band gap semiconductors; zinc compounds
资金
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2011-0023219, 2011-0019133, 2011-0003160, 2011K000627]
- National Research Foundation of Korea [2011-0023219] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Here we report the directed growth of ZnO nanowires on multilayer graphene films (MGFs) without the use of metal seed materials. The ZnO source substance was diffused onto the MGF surface, where nanowires tended to grow in the high surface energy sites. This property was exploited to fabricate top-gate structural nanowire transistors with ZnO nanowires grown in the direction of the exposed sides of 6 x 4 mu m patterned MGFs with a SiO2 capping layer. The devices showed an on-current of 160 nA, a threshold voltage of -2.27 V, an on-off current ratio of 3.98 x 10(5), and a field effect mobility of similar to 41.32 cm(2)/V.s. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684614]
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