期刊
APPLIED PHYSICS LETTERS
卷 101, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4769217
关键词
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资金
- National Outstanding Young Investigator Grant of China [10825419]
- key project of C-NSF [50831001]
- National 973 Program of China [2009CB623700]
- Beijing high-level talents [PHR20100503]
- C-NSF [11004004, 10904001]
- Beijing Municipal Natural Science Foundation [1112004]
- [PXM201101420409000053]
In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10% was achieved for a diamond-structure SiC NW with a < 111 > direction. With an increase in the tensile strain, the conductance increased monotonously. The current rate of increase remained constant prior to fracture. The calculated piezoresistance coefficient of this SiC NW was -1.15 x 10(-11) Pa-1, which is similar to the coefficient of the bulk material. Our results indicate that these SiC NWs can be used as pressure sensors even in very high-pressure environments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769217]
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