Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain

Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors

(2011) Eric M. Gallo et al.   APPLIED PHYSICS LETTERS

Band structure of Si/Ge core–shell nanowires along the [110] direction modulated by external uniaxial strain

(2011) Xihong Peng et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Band structure parameters of wurtzite and zinc-blende GaAs under strain in the GW approximation

(2011) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Calculation of the diameter-dependent polytypism in GaAs nanowires from an atomic motif expansion of the formation energy

(2011) Volker Pankoke et al.   PHYSICAL REVIEW B

Electronic properties of strained Si/Ge core-shell nanowires

(2010) Xihong Peng et al.   APPLIED PHYSICS LETTERS

Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism

(2010) Philippe Caroff et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Nanowire Photodetectors

(2010) Cesare Soci et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Predicted band structures of III-V semiconductors in the wurtzite phase

(2010) A. De et al.   PHYSICAL REVIEW B

III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers

(2009) Zetian Mi   Journal of Nanophotonics

Charge Separation via Strain in Silicon Nanowires

(2009) Zhigang Wu et al.   NANO LETTERS

GaAs Core−Shell Nanowires for Photovoltaic Applications

(2009) Josef A. Czaban et al.   NANO LETTERS

First-principles study of GaAs nanowires

(2009) S. Cahangirov et al.   PHYSICAL REVIEW B

Strain-modulated electronic properties of Ge nanowires: A first-principles study

(2009) Paul Logan et al.   PHYSICAL REVIEW B

AB INITIO STUDY OF SIZE AND STRAIN EFFECTS ON THE ELECTRONIC PROPERTIES OF Si NANOWIRES

(2009) X.-H. PENG et al.   International Journal of Applied Mechanics

Performance of $n$-Type InSb and InAs Nanowire Field-Effect Transistors

(2008) M. Abul Khayer et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modelling the structure of GaAs and InAs nanowires

(2008) M Galicka et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Stacking-Faults-Free Zinc Blende GaAs Nanowires

(2008) Hadas Shtrikman et al.   NANO LETTERS

Ab initiocalculations of the mechanical and electronic properties of strained Si nanowires

(2008) Paul W. Leu et al.   PHYSICAL REVIEW B