期刊
APPLIED PHYSICS LETTERS
卷 100, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4732091
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资金
- Samsung Mobile Displays Research Center Program
- Korea Ministry of Knowledge Economy [10033573]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10033574, 10033573] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Knowledge Economy (MKE), Republic of Korea [B0008316] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for highly transparent ZTO channel-based thin film transistors (TFTs). Although both bilayer and trilayer films have a similar sheet resistance (3-5 Omega/sq), the ZTO/Ag bilayer is a more effective transparent S/D electrode for ZTO channel layer than the ZTO/Ag/ZTO trilayer S/D electrode, due to the direct contact of the Ag layer on the ZTO channel layer and a desirable oxide-metal-oxide multilayer structure for antireflection effects. ZTO channel-based all-transparent TFTs with ZTO/Ag bilayer S/D electrodes exhibited a saturation mobility of 4.54 cm(2)/Vs and a switching value (1.31 = V/decade), comparable to those of a ZTO channel-based TFT with metallic Ag S/D electrodes. This indicates that the antireflective ZTO/Ag bilayer is a promising transparent S/D electrode for use in all-transparent TFTs as a substitute for conventional opaque metal S/D electrodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732091]
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