Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors
出版年份 2012 全文链接
标题
Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 101, Issue 9, Pages 093308
出版商
AIP Publishing
发表日期
2012-08-31
DOI
10.1063/1.4748976
参考文献
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