期刊
APPLIED PHYSICS LETTERS
卷 101, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4742912
关键词
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资金
- (QREN initiative through COMPETE) from FCT [FEDER-POCTI/0155, PTDC/EME-MFE/103051/2008, PTDC/CTM-NAN/122868/2010]
- FCT [SFRH/BPD/72329/2010]
- FSE/POPH
- [PTDC/FIS/098943/2008]
- Fundação para a Ciência e a Tecnologia [PTDC/CTM-NAN/122868/2010, PTDC/EME-MFE/103051/2008, PTDC/FIS/098943/2008] Funding Source: FCT
The resistive switching (RS) mechanism in Ni-doped graphene oxide (GO) devices is studied. We found that RS depends strongly on the fabrication method of the GO sheet and on the electrode material. Resistive switching in GO-devices can be caused by the diffusion of ions from metallic electrode or by the migration of oxygen groups, depending on the fabrication process. We also show that GO-based structures possess activity-dependent modification capabilities, emphasized by the increase/decrease of device conductance after consecutive voltage sweeps of opposite polarity. Our results allow a better understanding of bipolar RS, towards future non-volatile memories and neuromorphic systems. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742912]
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