Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

标题
Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 100, Issue 5, Pages 052102
出版商
AIP Publishing
发表日期
2012-01-31
DOI
10.1063/1.3680564

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