Excellent carrier mobility of 0.24 cm2/Vs in regioregular poly(3-hexylthiophene) based field-effect transistor by employing octadecyltrimethoxysilane treated gate insulator
Excellent carrier mobility of 0.24 cm2/Vs in regioregular poly(3-hexylthiophene) based field-effect transistor by employing octadecyltrimethoxysilane treated gate insulator
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