期刊
APPLIED PHYSICS LETTERS
卷 101, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4747203
关键词
-
资金
- National Science Foundation [DMR-080679]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0804679] Funding Source: National Science Foundation
The band bending in a Mg-doped, p-type GaN film grown by hydride vapor phase epitaxy was studied at various temperatures. At 295 K, the band bending in dark was calculated to be approximately -1.5 eV. However, when the sample was heated to 600 K for 1 h in dark before performing a measurement at 295 K, the calculated value of band bending in dark became about -2.0 eV. These results are explained by the fact that increasing the sample temperature exponentially increases the rate at which the band bending restores and allows for a more accurate value of band bending to be measured. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747203]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据