4.6 Article

A core/shell mechanism for stacking-fault generation in GaAs nanowires

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APPLIED PHYSICS LETTERS
卷 100, 期 16, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3703765

关键词

gallium arsenide; III-V semiconductors; molecular dynamics method; nanofabrication; nanowires; semiconductor growth; stacking faults

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  1. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences as part of the Center for Energy Nanoscience, an Energy Frontier Research Center [DE-SC0001013]

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Generation of stacking faults (SFs) during the growth of nanowires (NWs) is a major concern for the efficiency of NW-based devices such as solar cells. Here, molecular-dynamics simulation of a [111]-oriented gallium arsenide NW reveals an atomistic mechanism of SF generation. Spatial distribution of the adatom energy on the (111)B top surface exhibits a core/shell structure due to the contraction of atomic bonds at the sidewall surfaces, where SFs are preferentially nucleated in the shell. A nucleation growth model incorporating the core/shell mechanism suggests a size and growth-condition controlled approach for SF-free growth of NWs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703765]

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