Growth and photoluminescence of InxGa1-xAs quantum dots on the surface of GaAs nanowires by metal organic chemical vapor deposition

InxGa1-xAs (x = 0.6-1) quantum dots are grown on the {112} side facets of GaAs nanowires by metal organic chemical vapor deposition. The emission spectrum of quantum dots exhibits a multi-peak structure due to size and composition fluctuations. The emission wavelength of quantum dots ranges from 857 nm to 930 nm at 77 K, which is distinctly blueshifted relative to that on traditional GaAs (100) planar substrate. The emission linewidth of an ensemble of quantum dots increases from 29.5 meV to 40.5 meV with increasing the In content, indicating a broader composition distribution of quantum dots. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4734391]