Optical properties of ultrathin InAs quantum-well-heterostructures

Band structure calculations of complete InAs monolayer in AlGaAs/GaAs quantum wells are performed within the framework of the extended-basis sp(3)d(5) s* tight-binding model. We show that the optical properties can be tuned from the quantum well energy below the GaAs band-gap depending on the well thickness and the position of the probe. The results are supported by differential reflectivity measurements and represent a concept for optoelectronic devices with an operation wavelength widely tuneable around 850 nm employing GaAs process technology. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731783]