4.6 Article

Laser-assisted sol-gel growth and characteristics of ZnO thin films

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APPLIED PHYSICS LETTERS
卷 100, 期 25, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4729944

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  1. National Research Foundation of Korea (NRF)
  2. Ministry of Education, Science and Technology [2012R1A1B3001837]

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ZnO thin films were grown on Si(100) substrates by a sol-gel method assisted by laser beam irradiation with a 325 nm He-Cd laser. In contrast to conventional sol-gel ZnO thin films, the surface morphology of the laser-assisted sol-gel thin films was much smoother, and the residual stress in the films was relaxed by laser irradiation. The luminescent properties of the films were also enhanced by laser irradiation, especially, by irradiation during the deposition and post-heat treatment stages. The incident laser beam is thought to play several roles, such as annihilating defects by accelerating crystallization during heat treatment, enhancing the surface migration of atoms and molecules, and relaxing the ZnO matrix structure during crystallization. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729944]

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