Formation of nitrogen-vacancy complexes during plasma-assisted nitrogen doping of epitaxial graphene on SiC(0001)

标题
Formation of nitrogen-vacancy complexes during plasma-assisted nitrogen doping of epitaxial graphene on SiC(0001)
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 100, Issue 23, Pages 233119
出版商
AIP Publishing
发表日期
2012-06-08
DOI
10.1063/1.4726281

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