期刊
APPLIED PHYSICS LETTERS
卷 101, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4766284
关键词
annealing; elemental semiconductors; multilayers; nanostructured materials; oxidation; photoluminescence; photovoltaic cells; plasma CVD; silicon; spectral line shift; transmission electron microscopy; tunnelling
资金
- German Research Foundation [ZA191/27-1]
- EU-project NASCEnT [FP7-245977]
- Karlsruhe Nano Micro Facility (KNMF) a Helmholtz research infrastructure at the Karlsruhe Institute of Technology (KIT)
We report on an in-situ oxidation effect during annealing of SiO2/SiO1.0N0.23 multilayers prepared by plasma enhanced chemical vapour deposition (PECVD). This in-situ oxidation leads to an undesired growth of the tunneling oxide and also affects the silicon nanocrystal (SiNC) size control, i.e., a NC shrinkage. The origin of this oxidation is identified to be a quasi-wet oxidation by O-H groups incorporated in the PECVD-SiO2 barrier layers. By varying the thickness of the PECVD-SiO2 layer underneath a single SiO1.0N0.23 layer, the extent of NC oxidation is tuned. The shrinkage of SiNCs is proven by a blueshift of the photoluminescence peak position as well as by transmission electron microscopy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766284]
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