期刊
APPLIED PHYSICS LETTERS
卷 101, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4766289
关键词
cadmium compounds; conduction bands; copper; II-VI semiconductors; semiconductor doping; semiconductor quantum dots; wide band gap semiconductors; XANES
资金
- University of Maine
- Natural Sciences and Engineering Research Council of Canada
- National Research Council Canada
- Canadian Institutes of Health Research
- Province of Saskatchewan
- Western Economic Diversification Canada
- University of Saskatchewan
X-ray absorption near edge structure spectroscopy (XANES) and theoretical modeling have been used to examine effects of hybridization on the conduction band edge in doped CdSe quantum dots (QDs). Experimentally, Cd M-3-edge XANES provides evidence for a lowering of the CB minimum for Cu doped CdSe QDs that is dependent on Cu concentration. Theoretical modeling suggests the effects of hybridization between Cu and Cd atoms in the QD can explain our experimental results. The model can be extended for other dopant systems and provide a simple, yet effective, method to predict the effects of hybridization on the CB levels in QDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766289]
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