期刊
APPLIED PHYSICS LETTERS
卷 101, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4756696
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资金
- GAAVCR [KJB100100903, IAA101120804]
- GAUK [73910]
- GACR [P204/12/P235]
- EC [245977]
- Ministry of Education of France
We collect a large number of experimental data from various sources to demonstrate that free-standing (FS) oxide-passivated silicon nanocrystals (SiNCs) exhibit considerably blueshifted emission, by 200 meV on average, compared to those prepared as matrix-embedded (ME) ones of the same size. This is suggested to arise from compressive strain, exerted on the nanocrystals by their matrix, which plays an important role in the light-emission process; this strain has been neglected up to now as opposed to the impact of quantum confinement or surface passivation. Our conclusion is also supported by the comparison of low-temperature behavior of photoluminescence of matrix-embedded and free-standing silicon nanocrystals. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756696]
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