期刊
APPLIED PHYSICS LETTERS
卷 99, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3653240
关键词
CMOS integrated circuits; electroabsorption; electro-optical modulation; high-k dielectric thin films; MIS devices; nanophotonics; optical waveguides; plasmonics
An ultracompact, broadband, and fully complementary metal-oxide-semiconductor (CMOS) compatible Si nanoplasmonic electro-absorption modulator is proposed based on the recently developed horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide. The modulation relies on a highly accumulated electron layer at the insulator/Si interface induced by an applied voltage. Proof-of-concept devices are fabricated using standard Si CMOS technology. A 3-dB modulation around 1550 nm is measured under similar to 6.5 V bias for a device with total length of only 4 mu m. The design suggests that larger modulation could be achieved by using high-kappa dielectrics as the insulator, thinning down the insulator thickness, and narrowing the Si core of the nanoplasmonic waveguide. (C) 2011 American Institute of Physics. [doi:10.1063/1.3653240]
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