High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition

A method of alternative co-doping in metal organic chemical deposition was used to realize high hole carrier concentrations of about 6 x 10(18)/cm(3) in Al(x)Ga(1-x)N (x = 0.4) and 2 x 10(19)/cm(3) for GaN at room temperature. This technique opens up a new avenue for fabricating electronic p-channel devices, such as p-channel high electron mobility transistor, and vertical current flow type devices, such as deep ultra violet light emitting diodes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3641476]