期刊
APPLIED PHYSICS LETTERS
卷 98, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3540501
关键词
-
资金
- U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences [DE-SC0001009]
- DOE [DE-FC26-06NT42857]
- Solid State Lighting and Energy Center (SSLEC) at the UCSB
High internal and external quantum efficiency GaN/InGaN solar cells are demonstrated. The internal quantum efficiency was assessed through the combination of absorption and external quantum efficiency measurements. The measured internal quantum efficiency, as high as 97%, revealed an efficient conversion of absorbed photons into electrons and holes and an efficient transport of these carriers outside the device. Improved light incoupling into the solar cells was achieved by texturing the surface. A peak external quantum efficiency of 72%, a fill factor of 79%, a short-circuit current density of 1.06 mA/cm(2), and an open circuit voltage of 1.89 V were achieved under 1 sun air-mass 1.5 global spectrum illumination conditions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3540501]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据