Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric

Memory effects in complex materials and nanoscale systems

(2011) Yuriy V. Pershin et al.   ADVANCES IN PHYSICS

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

(2010) Dmitry Ruzmetov et al.   JOURNAL OF APPLIED PHYSICS

Constant threshold resistivity in the metal-insulator transition ofVO2

(2010) J. Cao et al.   PHYSICAL REVIEW B

Phase-transition driven memristive system

(2009) T. Driscoll et al.   APPLIED PHYSICS LETTERS

New aspects of the metal–insulator transition in single-domain vanadium dioxide nanobeams

(2009) Jiang Wei et al.   Nature Nanotechnology

Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams

(2009) J. Cao et al.   Nature Nanotechnology

Memory Metamaterials

(2009) T. Driscoll et al.   SCIENCE

Electrostatic modification of infrared response in gated structures based on VO2

(2008) M. M. Qazilbash et al.   APPLIED PHYSICS LETTERS