Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface

标题
Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 99, Issue 12, Pages 123501
出版商
AIP Publishing
发表日期
2011-09-21
DOI
10.1063/1.3643049

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