期刊
APPLIED PHYSICS LETTERS
卷 99, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3636412
关键词
avalanche photodiodes; dark conductivity; electric breakdown; gallium compounds; III-V semiconductors; semiconductor epitaxial layers; silicon
Near ultraviolet-sensitive separate absorption and multiplication avalanche photodiodes with GaN/SiC epitaxial layers grown on SiC substrate were fabricated. Dark current < 1 pA at 90% breakdown voltage, maximum multiplication gain of similar to 10(5), and responsivity exceeding 4.2 A/W at 365 nm were achieved. (C) 2011 American Institute of Physics. [doi:10.1063/1.3636412]
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